3GAE

Last month Samsung Foundry quietly announced that it was set to begin producing chips using its 3GAE (3 nm-class, gate-all-around transistors, early) process technology in the second quarter. While the industry's first 3 nm-class node with GAA transistors is a noteworthy achievement by itself, one thing that is particularly important is that to make GAA transistors efficiently, fabs have to be equipped with new production tools. Fittingly, Applied Materials has recently outlined their next generation of tools that will be used to enable Samsung (and other fabs) to build their first GAA chips. Gate-All-Around Transistors: Solving Many Problems at Once New process technologies should enable higher performance, lower power, and higher transistor density to meet requirements of chip designers. But this combination has been particularly hard...

Samsung Foundry: 2nm Silicon in 2025

One of the key semiconductor technologies beyond 3D FinFET transistors are Gate-All-Around transistors, which show promise to help extend the ability to drive processors and components to higher performance...

29 by Dr. Ian Cutress on 10/6/2021

Samsung: Deployment of 3nm GAE Node on Track for 2022

Samsung Foundry has made some changes to its plans concerning its 3 nm-class process technologies that use gate-all-around (GAA) transistors, or what Samsung calls its multi-bridge channel field-effect transistors...

32 by Anton Shilov on 7/9/2021

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